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Not for new design, this product will be obsoleted soon
TSDF02424X/TSDF02424XR
Vishay Semiconductors
Dual - MOSMIC(R)- two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage
Comments
MOSMIC - MOS Monolithic Integrated Circuit
6 5 4 6 5 4
TY
Features
* Two AGC amplifiers in a single package * Easy Gate 1 switch-off with PNP switching transistors inside PLL * Integrated gate protection diodes * Low noise figure * High gain, medium forward transadmittance (24 mS typ.) * * * * * *
CW
WC5
TY CW
W5C
e3
1 2 3 TSDF02424X
1 2 3 TSDF02424XR
Electrostatic sensitive device. Observe precautions for handling.
16602
Biasing network on chip Improved cross modulation at gain reduction High AGC-range with less steep slope SMD package, reverse pinning possible Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data
Typ: TSDF02424X Case: SOT-363 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Gate 1 (amplifier 1), 2 = Gate 2, 3 = Drain (amplifier 1), 4 = Drain (amplifier 2), 5 = Source, 6 = Gate1 (amplifier 2) Typ: TSDF02424XR Case: SOT-363 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Gate 1 (amplifier 1), 2 = Source, 3 = Drain (amplifier 1), 4 = Drain (amplifier 2), 5 = Gate 2, 6 = Gate1 (amplifier 2) V - Vishay Y - Year, is variable for digit from 0 to 9 (e.g. 0 = 2000, 1 = 2001) CW - Calendar Week, is variable for number from 01 to 52 Number of Calendar Week is always indicating place of pin 1
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage.
Typical Application
2 (TSDF02424X) 5 (TSDF02424XR)
AGC C
RFC
G2 (common)
+5 V D3 C RF out
C RF in +5 V RG1
1 G1
AMP1
RFC +5 V D4 C RF out
C RF in +5 V RG1
6 G1
AMP2
S (common)
5 (TSDF02424X) 2 (TSDF02424XR)
16601
Parts Table
Part TSDF02424X TSDF02424XR WC5 W5C Marking SOT-363 SOT-363R Package
Document Number 85088 Rev. 1.3, 05-Sep-08
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TSDF02424X/TSDF02424XR
Vishay Semiconductors
All of following data and characteristics are valid for operating either amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM + VG1/ G2SM - VG1SM Ptot TCh Tstg Value 8 25 10 6 1.5 160 150 - 55 to + 150 Unit V mA mA V V mW C C
Maximum Thermal Resistance
Parameter Channel ambient
1) 1)
Test condition
Symbol RthChA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Test condition ID = 10 A, VG1S = VG2S = 0 Symbol V(BR)DSS Min 12 7 7 10 10 20 20 8 0.5 0.8 1.0 13 18 1.3 1.4 Typ. Max Unit V V V nA nA mA V V
+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS IG2S = 10 mA, VG2S = VDS = 0 V(BR)G2SS + IG1SS IG2SS IDSO VG1S(OFF) VG2S(OFF)
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 A VDS = VRG1 = 5 V, RG1 = 56 k, ID = 20 A
Remark on improving intermodulation behavior: By setting RG1 smaller than 56 k, typical value of IDSO will raise and improved intermodulation behavior will be performed.
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Document Number 85088 Rev. 1.3, 05-Sep-08
TSDF02424X/TSDF02424XR
Vishay Semiconductors Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 k, ID = IDSO, f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz AGC range Noise figure VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3.3 mS, GL = 1 mS, f = 800 MHz Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Test condition Symbol |y21s| Cissg1 Crss Coss Gps Gps Gps F F Xmod 90 16.5 Min 20 Typ. 24 1.7 15 0.9 26 21 45 1 1.3 Max 28 2.1 30 Unit mS pF fF pF dB dB dB dB dB dBV
Xmod
100
105
dBV
Package Dimensions in mm (Inches)
14280
Document Number 85088 Rev. 1.3, 05-Sep-08
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TSDF02424X/TSDF02424XR
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85088 Rev. 1.3, 05-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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